High efficiency 293 GHz radiating source in 65 nm CMOS

Samuel Jameson, Eran Socher

Research output: Contribution to journalArticlepeer-review


This letter presents a J-band radiating source (284-301 GHz) based on a differential Colpitts oscillator with an on-chip antenna in 65 nm CMOS. The source radiates the third harmonic of the oscillation frequency, which is also generated in the voltage controlled oscillator (VCO) itself due to its large voltage signal. An integrated loop antenna serves also as the load inductance at the drains of the VCO transistors, acting as a choke at the fundamental and matched antenna at the third harmonic. The antenna has a directivity above +9 dBi across the tuning range. This frequency source has a DC-to-RF radiated power efficiency of 2.8%, a radiated power of -2.7 dBm and an EIRP of +6.4 dBm, taking a silicon area of only 0.26 mm2.

Original languageEnglish
Article number6816088
Pages (from-to)463-465
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number7
StatePublished - Jul 2014


  • Antenna
  • CMOS
  • Colpitts
  • RF source
  • j-band
  • loop antenna
  • voltage controlled oscillator (VCO)


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