Keyphrases
Technology Integration
100%
Electroless
100%
High Aspect Ratio
100%
Electroless Deposition
100%
Electroless Copper
100%
Simplified Model
50%
Ion Concentration
50%
Aqueous Solution
50%
Deposition Rate
50%
Fully Integrated
50%
Material Properties
50%
Process Integration
50%
Surface Reaction
50%
Silicon Wafer
50%
Promising Technology
50%
Deposition Layer
50%
Catalytic Processes
50%
Via Contacts
50%
Mechanical Processes
50%
Self-catalysis
50%
Copper Material
50%
Ion Diffusivity
50%
Electrochemical Oxidation
50%
Copper Metallization
50%
Seed Layer
50%
Self-aligned Process
50%
Ultralarge-scale Integration
50%
Cu Barrier
50%
Oxidation-reduction Reaction
50%
Reaction Limit
50%
Solid-liquid Interface
50%
Barrier Materials
50%
Thin Film Materials
50%
Conformality
50%
Integrated Application
50%
High-aspect Ratio via
50%
Integration Concept
50%
Engineering
High Aspect Ratio
100%
Diffusivity
50%
Experimental Result
50%
Metallizations
50%
Thin Films
50%
Deposition Rate
50%
Silicon Wafer
50%
Aqueous Solution
50%
Ion Concentration
50%
ULSI Circuits
50%
Barrier Material
50%
Seed Layer
50%
Oxidation-Reduction Reaction
50%
Film Material
50%
Conformality
50%
Material Science
Electroless Deposition
100%
Oxidation Reaction
50%
Catalysis
50%
Diffusivity
50%
Solution
50%
Thin Films
50%
Silicon Wafer
50%
Materials Property
50%
Surface Reaction
50%
Solid Interface
50%
Mechanical Processing
50%
Chemical Engineering
Electroless Plating
100%
Diffusion
50%
Deposition Rate
50%
Metallizing
50%