High aspect ratio microtunnel technique to empirically model electroless deposition

Melvin Desilva*, Yosef Shacham-Diamand, Robert Soave, Hansuk Kim

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A novel technique for studying the growth of electroless copper deposition into high aspect ratio structures is presented. The advantage of this technique is that growth into 100 to 400 μm long trenches with aspect ratios of 500:1 can be studied without any etching into the substrate. This technique allows us to determine diffusion kinetics, overall growth rates, and to predict step coverage into trenches and vias. The results indicate that electroless copper growth at 40°C into 0.7μm tunnels is diffusion controlled with an effective diffusion coefficient in the range of 2.0 to 8.9 × 10-5 cm2/s.

Original languageEnglish
Pages (from-to)L78-L80
JournalJournal of the Electrochemical Society
Volume143
Issue number4
DOIs
StatePublished - Apr 1996
Externally publishedYes

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