Heating in current carrying molecular junctions

Dvira Segal*, Abraham Nitzan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

97 Scopus citations

Abstract

The description of a framework for estimating heating and temperature rise in current carrying molecular junctions was presented. The Redfield approximation was applied to a tight binding model for the molecular bridge supplemented by coupling to a phonon bath. This model was used to evaluate the fraction of available energy that is released as heat on the molecular bridge.

Original languageEnglish
Pages (from-to)3915-3927
Number of pages13
JournalJournal of Chemical Physics
Volume117
Issue number8
DOIs
StatePublished - 22 Aug 2002

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