Haynes-Shockley experiment on n-type HgCdTe

The ambipolar drift mobility of holes in n-type HgCdTe with nominal composition of x=0.215 was determined by the Haynes-Shockley experiment. The measurement was performed using a novel device that includes a special photoconductive sensing structure. The output device samples the excess carriers by sensing the conduction modulation in a narrow region. This method enables the measurement of the moving excess carriers packet without the conventional junction that is used traditionally. This way the difficulty to produce a sensing p-n junction on n-type HgCdTe is eliminated. The mobility of holes at 77 K was measured to be 570 cm² V^-1 s ^-1 and its temperature dependence is given by μ_a=A⊙T^-n where n=2.78±0.1 and A=10 ⁸ in the 77-87 K temperature range.