Hall resistance in the hopping regime: A "hall insulator"?

O. Entin-Wohlman*, A. G. Aronov, Y. Levinson, Y. Imry

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

The Hall conductivity and resistivity of strongly localized electrons at low temperatures and small magnetic fields are obtained. The results depend on whether one uses the conductivity or resistivity tensor to obtain the macroscopic Hall resistivity. In the second case the Hall resistivity always diverges exponentially as T0. However, when the Hall resistivity is derived from the conductivity, the resulting temperature dependence is sensitive to the disorder configuration, and the Hall resistivity may approach a constant value as T0. This is the Hall insulating behavior. It is argued that for strictly dc conditions the transport quantity that should be averaged is the resistivity, and this shows no Hall insulating behavior.

Original languageEnglish
Pages (from-to)4094-4097
Number of pages4
JournalPhysical Review Letters
Volume75
Issue number22
DOIs
StatePublished - 1995

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