TY - JOUR
T1 - Hall resistance in the hopping regime
T2 - A "hall insulator"?
AU - Entin-Wohlman, O.
AU - Aronov, A. G.
AU - Levinson, Y.
AU - Imry, Y.
PY - 1995
Y1 - 1995
N2 - The Hall conductivity and resistivity of strongly localized electrons at low temperatures and small magnetic fields are obtained. The results depend on whether one uses the conductivity or resistivity tensor to obtain the macroscopic Hall resistivity. In the second case the Hall resistivity always diverges exponentially as T0. However, when the Hall resistivity is derived from the conductivity, the resulting temperature dependence is sensitive to the disorder configuration, and the Hall resistivity may approach a constant value as T0. This is the Hall insulating behavior. It is argued that for strictly dc conditions the transport quantity that should be averaged is the resistivity, and this shows no Hall insulating behavior.
AB - The Hall conductivity and resistivity of strongly localized electrons at low temperatures and small magnetic fields are obtained. The results depend on whether one uses the conductivity or resistivity tensor to obtain the macroscopic Hall resistivity. In the second case the Hall resistivity always diverges exponentially as T0. However, when the Hall resistivity is derived from the conductivity, the resulting temperature dependence is sensitive to the disorder configuration, and the Hall resistivity may approach a constant value as T0. This is the Hall insulating behavior. It is argued that for strictly dc conditions the transport quantity that should be averaged is the resistivity, and this shows no Hall insulating behavior.
UR - http://www.scopus.com/inward/record.url?scp=0001473455&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.75.4094
DO - 10.1103/PhysRevLett.75.4094
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AN - SCOPUS:0001473455
SN - 0031-9007
VL - 75
SP - 4094
EP - 4097
JO - Physical Review Letters
JF - Physical Review Letters
IS - 22
ER -