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Hall photovoltage deep-level spectroscopy of GaN films
I. Shalish
*
, C. E.M. de Oliveira
,
Yoram Shapira
, J. Salzman
*
Corresponding author for this work
Engineering General
Harvard University
Tel Aviv University
Technion-Israel Institute of Technology
Research output
:
Contribution to journal
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Article
›
peer-review
11
Scopus citations
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Keyphrases
Photovoltage
100%
Hall Voltage
100%
GaN Films
100%
Semiconductors
33%
Photoinduced
33%
Analytical Expression
33%
Sapphire
33%
Photoluminescence
33%
Photoconductivity
33%
Grain Boundary
33%
Deep State
33%
Surface Photovoltage
33%
Charge Trapping
33%
Yellow Luminescence
33%
Valence Band
33%
Hall Coefficient
33%
Blue Luminescence
33%
Voltage Spectrum
33%
Deep Donor
33%
Material Science
Film
100%
Luminescence
100%
Photoluminescence
50%
Thin Films
50%
Sapphire
50%
Photoconductivity
50%
Surface (Surface Science)
50%
Grain Boundary
50%
Physics
Photovoltage
100%
Photoelectric Emission
50%
Thin Films
50%
Photoluminescence
50%
Photoconductivity
50%
Grain Boundary
50%
Engineering
Deep Level
100%
Photovoltage
100%
Thin Films
33%
Valence Band
33%
Surface Photovoltage
33%
Related State
33%
Chemical Engineering
Film
100%