Hall coefficient measurements at high perpendicular magnetic fields in polycrystalline bismuth films

Ralph Rosenbaum, Jean Galibert

Research output: Contribution to journalConference articlepeer-review

Abstract

Hall coefficient measurements have been performed on polycrystalline bismuth films of 9180 Å and 11850 Å thickness at different temperatures in perpendicular magnetic fields. At T=270 K, the Hall coefficient data increased in magnitude by a factor of three and saturated at high fields. Fits of the Pippard-Fawcett Hall coefficient expression were made to the data using four fitting parameters, three of which were extracted from the perpendicular magnetoresistance data at 270 K. Data at lower temperatures are presented.

Original languageEnglish
Pages (from-to)287-290
Number of pages4
JournalPhysica B: Condensed Matter
Volume346-347
Issue number1-4
DOIs
StatePublished - 30 Apr 2004
EventProceedings of the 7th International Symposium on Research - Toulouse, France
Duration: 20 Jul 200323 Jul 2003

Keywords

  • Bismuth thin films
  • Hall coefficient
  • Hall voltage
  • Magnetoresistance

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