Halide chemical vapor deposition of 2D semiconducting atomically-thin crystals: From self-seeded to epitaxial growth

Avinash Patsha, Kamalakannan Ranganathan, Miri Kazes, Dan Oron, Ariel Ismach*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Atomically-thin crystals remain an epicenter of today's ongoing efforts of materials exploration for both fundamental knowledge and technological applications. We show that key modifications in the nucleation and growth steps lead to a controlled self-seeded growth of the monolayer transition metal dichalcogenide (TMDC) crystals and their lateral heterostructures via an halide chemical vapor deposition (HCVD) process which is a proven industrial scale and carbon-free synthesis technique for various material types. We present a general growth model with the limiting conditions on the nucleation density and crystal size of the 2D TMDCs grown in HCVD process. Furthermore, upon reduction of the self-seeded growth by a suitable surface pre-treatment, and by the modification of the nucleation step, epitaxial growth of monolayer TMDCs is also demonstrated using HCVD approach. The steady-state and time-resolved photoluminescence spectroscopic studies revealed the high optical and electronic quality of the as-grown 2D TMDCs semiconducting crystals. Field-effect transistor device characteristics of HCVD grown monolayer MoS2 using SiO2 gate dielectric shows an average mobility of 26 ± 7 cm2.V−1.s−1 and on-off ratio of ∼107, promising for large-scale device applications.

Original languageEnglish
Article number101379
JournalApplied Materials Today
Volume26
DOIs
StatePublished - Mar 2022

Funding

FundersFunder number
Israel Science Foundation2596/21, 2171/17

    Fingerprint

    Dive into the research topics of 'Halide chemical vapor deposition of 2D semiconducting atomically-thin crystals: From self-seeded to epitaxial growth'. Together they form a unique fingerprint.

    Cite this