Growth and properties of Hg1-x Cdx Te epitaxial layers

Y. Nemirovsky*, S. Margalit, E. Finkman, Y. Shacham-Diamand, I. Kidron

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The growth of epitaxial layers of mercury-cadmium-telluride (Hg1-xCdxTe) with relatively low x (0.2-0.3) from Te-rich solutions in an open tube sliding system is studied. The development of a semiclosed slider system with unique features permits the growth of low x material at atmospheric pressure. The quality of the films is improved by the use of Cd1-yZyTe and Hg1-xCdxTe substrates instead of CdTe. The substrate effects and the growth procedure are discussed and a solidus line at a relatively low temperature is reported. The asgrown epitaxial layers are p-type with hole concentration of the order of 1·1017 cm-3, hole mobility of about 300 cm2·V-1 sec-1 and excess minority carrier life-time of 3 nsec, at 77 K.

Original languageEnglish
Pages (from-to)133-153
Number of pages21
JournalJournal of Electronic Materials
Issue number1
StatePublished - Jan 1982
Externally publishedYes


  • Hg Cd Te
  • Liquid phase epitaxy.


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