Graphene synthesis via magnetic inductive heating of copper substrates

Richard Piner, Huifeng Li*, Xianghua Kong, Li Tao, Iskandar N. Kholmanov, Hengxing Ji, Wi Hyoung Lee, Ji Won Suk, Jongpil Ye, Yufeng Hao, Shanshan Chen, Carl W. Magnuson, Ariel F. Ismach, Deji Akinwande, Rodney S. Ruoff

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Scaling graphene growth using an oven to heat large substrates becomes less energy efficient as system size is increased. We report a route to graphene synthesis in which radio frequency (RF) magnetic fields inductively heat metal foils, yielding graphene of quality comparable to or higher than that of current chemical vapor deposition techniques. RF induction heating allows for rapid temperature ramp up/down, with great potential for large scale and rapid manufacturing of graphene with much better energy efficiency. Back-gated field effect transistors on a SiO2/Si substrate showed carrier mobility up to ∼14 000 cm2 V-1 s-1 measured under ambient conditions. Many advantages of RF heating are outlined, and some fundamental aspects of this approach are discussed.

Original languageEnglish
Pages (from-to)7495-7499
Number of pages5
JournalACS Nano
Issue number9
StatePublished - 24 Sep 2013
Externally publishedYes


  • CVD graphene
  • inductive heating


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