@article{e7d1bfad212d413e9308c097ee588cca,
title = "Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms",
abstract = "The initial stages of gas-source growth of Si(001) using disilane have been investigated using a combination of elevated-temperature STM and atomistic modelling. The reaction pathway from the initial adsorption of disilane fragments up to the nucleation of short strings of epitaxial dimers is discussed. By the use of our STM to study disilane at the temperatures of interest, and atomistic modelling to calculate structural stability and significant activation barriers, we are able to propose a complete description of the mechanisms which underlie gas-source growth.",
keywords = "Chemical vapour deposition, Density functional calculations, Models of surface chemical reactions, Scanning tunneling microscopy, Silane, Silicon, Single crystal epitaxy, Surface structure",
author = "Owen, \{J. H.G.\} and K. Miki and Bowler, \{D. R.\} and Goringe, \{C. M.\} and I. Goldfarb and Briggs, \{G. A.D.\}",
note = "Funding Information: Laboratory, Oxford (MML), which is partially funded byE PSRC grant GR/H58278. Funding Information: We would like to thank Henry WeinbergM, artin Castell, David Pettifor and Carl Sofield for useful discussionsJ.. H.G.O. and D.R.B. are funded by the EPSRC, and J.H.G.O. was partly funded by AEA TechnologyH, arwell. C.M.G. is a research fellow of Linacre College, Oxford. Computing facilitiesw erep rovidedb y the MaterialsM odelling",
year = "1997",
month = dec,
day = "19",
doi = "10.1016/S0039-6028(97)00592-X",
language = "אנגלית",
volume = "394",
pages = "79--90",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier B.V.",
number = "1-3",
}