Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms

J. H.G. Owen; K. Miki; D. R. Bowler; C. M. Goringe; I. Goldfarb; G. A.D. Briggs

doi:10.1016/S0039-6028(97)00592-X

Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms

J. H.G. Owen^*, K. Miki, D. R. Bowler, C. M. Goringe, I. Goldfarb, G. A.D. Briggs

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The initial stages of gas-source growth of Si(001) using disilane have been investigated using a combination of elevated-temperature STM and atomistic modelling. The reaction pathway from the initial adsorption of disilane fragments up to the nucleation of short strings of epitaxial dimers is discussed. By the use of our STM to study disilane at the temperatures of interest, and atomistic modelling to calculate structural stability and significant activation barriers, we are able to propose a complete description of the mechanisms which underlie gas-source growth.

Original language	English
Pages (from-to)	79-90
Number of pages	12
Journal	Surface Science
Volume	394
Issue number	1-3
DOIs	https://doi.org/10.1016/S0039-6028(97)00592-X
State	Published - 19 Dec 1997
Externally published	Yes

Keywords

Chemical vapour deposition
Density functional calculations
Models of surface chemical reactions
Scanning tunneling microscopy
Silane
Silicon
Single crystal epitaxy
Surface structure

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10.1016/S0039-6028(97)00592-X

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title = "Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms",

abstract = "The initial stages of gas-source growth of Si(001) using disilane have been investigated using a combination of elevated-temperature STM and atomistic modelling. The reaction pathway from the initial adsorption of disilane fragments up to the nucleation of short strings of epitaxial dimers is discussed. By the use of our STM to study disilane at the temperatures of interest, and atomistic modelling to calculate structural stability and significant activation barriers, we are able to propose a complete description of the mechanisms which underlie gas-source growth.",

keywords = "Chemical vapour deposition, Density functional calculations, Models of surface chemical reactions, Scanning tunneling microscopy, Silane, Silicon, Single crystal epitaxy, Surface structure",

author = "Owen, {J. H.G.} and K. Miki and Bowler, {D. R.} and Goringe, {C. M.} and I. Goldfarb and Briggs, {G. A.D.}",

note = "Funding Information: Laboratory, Oxford (MML), which is partially funded byE PSRC grant GR/H58278. Funding Information: We would like to thank Henry WeinbergM, artin Castell, David Pettifor and Carl Sofield for useful discussionsJ.. H.G.O. and D.R.B. are funded by the EPSRC, and J.H.G.O. was partly funded by AEA TechnologyH, arwell. C.M.G. is a research fellow of Linacre College, Oxford. Computing facilitiesw erep rovidedb y the MaterialsM odelling",

year = "1997",

month = dec,

day = "19",

doi = "10.1016/S0039-6028(97)00592-X",

language = "אנגלית",

volume = "394",

pages = "79--90",

journal = "Surface Science",

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T2 - I. Si(001) nucleation mechanisms

AU - Owen, J. H.G.

AU - Miki, K.

AU - Bowler, D. R.

AU - Goringe, C. M.

AU - Goldfarb, I.

AU - Briggs, G. A.D.

N1 - Funding Information: Laboratory, Oxford (MML), which is partially funded byE PSRC grant GR/H58278. Funding Information: We would like to thank Henry WeinbergM, artin Castell, David Pettifor and Carl Sofield for useful discussionsJ.. H.G.O. and D.R.B. are funded by the EPSRC, and J.H.G.O. was partly funded by AEA TechnologyH, arwell. C.M.G. is a research fellow of Linacre College, Oxford. Computing facilitiesw erep rovidedb y the MaterialsM odelling

PY - 1997/12/19

Y1 - 1997/12/19

N2 - The initial stages of gas-source growth of Si(001) using disilane have been investigated using a combination of elevated-temperature STM and atomistic modelling. The reaction pathway from the initial adsorption of disilane fragments up to the nucleation of short strings of epitaxial dimers is discussed. By the use of our STM to study disilane at the temperatures of interest, and atomistic modelling to calculate structural stability and significant activation barriers, we are able to propose a complete description of the mechanisms which underlie gas-source growth.

AB - The initial stages of gas-source growth of Si(001) using disilane have been investigated using a combination of elevated-temperature STM and atomistic modelling. The reaction pathway from the initial adsorption of disilane fragments up to the nucleation of short strings of epitaxial dimers is discussed. By the use of our STM to study disilane at the temperatures of interest, and atomistic modelling to calculate structural stability and significant activation barriers, we are able to propose a complete description of the mechanisms which underlie gas-source growth.

KW - Chemical vapour deposition

KW - Density functional calculations

KW - Models of surface chemical reactions

KW - Scanning tunneling microscopy

KW - Silane

KW - Silicon

KW - Single crystal epitaxy

KW - Surface structure

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JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms

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Keywords

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