Gap state distribution and Fermi level pinning in monolayer to multilayer MoS₂ field effect transistors

Engineering & Materials Science

• Conduction bands 65%
• Dangling bonds 35%
• Electronic states 30%
• Energy gap 43%
• Fermi level 100%
• Field effect transistors 61%
• Microscopic examination 20%
• Monolayers 75%
• Multilayers 55%
• Semiconductor devices 22%
• Transition metals 28%

Chemistry

• Band Gap 29%
• Conduction Band 41%
• Dangling Bond 25%
• Electronic State 14%
• Fermi Level 66%
• Field Effect 57%
• Kelvin Probe Force Microscopy 28%
• Monolayer 43%
• Multilayer 51%
• Semiconductor 14%
• Surface 6%
• Transition Element 13%
• Volume 11%

Medicine & Life Sciences

• Atomic Force Microscopy 35%
• Equipment and Supplies 34%
• Metals 25%
• Semiconductors 41%