@inproceedings{33ff42b112b244efb46a58b2241ecff8,
title = "GaN-on-Si μlED optoelectrodes for high-spatiotemporal-accuracy optogenetics in freely behaving animals",
abstract = "We present the micromachined GaN-on-Si μLED optoelectrodes with neuron-sized LEDs monolithically integrated on a thin narrow silicon shank for optical stimulation and electrical recording in a behaving animal. The fabricated μLEDs show an optical power of 1.9 μW at 4 V from a small size of 15 μm × 10 μm with a peak plug efficiency of 0.6 %. This allows high spatial and temporal resolution optogenetic studies from the μLED array in a small pitch of 60 μm along with the integrated recording electrodes in 20-μm pitch. Stimulation artifacts were significantly mitigated by two-metal-layer shielding topology. In vivo validation of the fabricated optoelectrode confirmed the successful light-induced modulation of neuronal activities in hippocampus with square optical pulses of 100-ms duration.",
author = "K. Kim and D. English and S. McKenzie and F. Wu and E. Stark and J. Seymour and Ku, {P. C.} and K. Wise and G. Buzsaki and E. Yoon",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",
year = "2017",
month = jan,
day = "31",
doi = "10.1109/IEDM.2016.7838486",
language = "אנגלית",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "26.5.1--26.5.4",
booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",
address = "ארצות הברית",
}