GaAs-GaAlAs Double-Heterostructure Injection Lasers with Distributed Feedback

K. Aiki, J. Umeda, A. Katzir, A. Yariv, H. W. Yen

Research output: Contribution to journalArticlepeer-review

Abstract

GaAs-GaAlAs double-heteiostructure distributed-feedback injection lasers are investigated at temperatures between 80 and 150 K under pulsed operation. The optical feedback for laser oscillation is provided by a corrugated interface between the p-GaAs active layer and the p-GaAlAs layer. The corrugation is made by two methods, ion milling and chemical etching, and the latter method is found to give the lower threshold. The laser oscillation occurs in a single longitudinal mode, whose wavelength is stable against the change of the excitation level. The temperature dependence of the wavelength of the distributed-feedback laser is shown to be 0.5 A/deg, which is about [formula omitted] to [formula omitted] that of the conventional Fabry-Perot (FP) laser. Copyright š 1975 by The Institute of Electrical and Electronics Engineers, Inc.

Original languageEnglish
Pages (from-to)436-439
Number of pages4
JournalIEEE Journal of Quantum Electronics
Volume11
Issue number7
DOIs
StatePublished - Jul 1975
Externally publishedYes

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