GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinement

K. Aiki; M. Nakamura; J. Umeda; A. Yariv; A. Katzir; H. W. Yen

doi:10.1063/1.88386

GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinement

K. Aiki^*, M. Nakamura, J. Umeda, A. Yariv, A. Katzir, H. W. Yen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

72 Scopus citations

Abstract

Remarkable reduction of the threshold current density is achieved in GaAs-GaAlAs distributed-feedback diode lasers by adopting a separate-confinement heterostructure. The diodes are lased successfully at temperatures up to 340°K under pulsed operation. The lowest threshold current density is 3 kA/cm² at 300°K.

Original language	English
Pages (from-to)	145-146
Number of pages	2
Journal	Applied Physics Letters
Volume	27
Issue number	3
DOIs	https://doi.org/10.1063/1.88386
State	Published - 1975
Externally published	Yes

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title = "GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinement",

abstract = "Remarkable reduction of the threshold current density is achieved in GaAs-GaAlAs distributed-feedback diode lasers by adopting a separate-confinement heterostructure. The diodes are lased successfully at temperatures up to 340°K under pulsed operation. The lowest threshold current density is 3 kA/cm2 at 300°K.",

author = "K. Aiki and M. Nakamura and J. Umeda and A. Yariv and A. Katzir and Yen, {H. W.}",

year = "1975",

doi = "10.1063/1.88386",

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pages = "145--146",

journal = "Applied Physics Letters",

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AU - Aiki, K.

AU - Nakamura, M.

AU - Umeda, J.

AU - Yariv, A.

AU - Katzir, A.

AU - Yen, H. W.

PY - 1975

Y1 - 1975

N2 - Remarkable reduction of the threshold current density is achieved in GaAs-GaAlAs distributed-feedback diode lasers by adopting a separate-confinement heterostructure. The diodes are lased successfully at temperatures up to 340°K under pulsed operation. The lowest threshold current density is 3 kA/cm2 at 300°K.

AB - Remarkable reduction of the threshold current density is achieved in GaAs-GaAlAs distributed-feedback diode lasers by adopting a separate-confinement heterostructure. The diodes are lased successfully at temperatures up to 340°K under pulsed operation. The lowest threshold current density is 3 kA/cm2 at 300°K.

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VL - 27

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinement

Abstract

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