Fully integrated LDMOS class AB power amplifiers

Amity Wolfman, Avraham Sayag, Sharon Levin, Eran Socher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Two fully integrated laterally diffused MOS (LDMOS) class AB power amplifiers (PA) are presented. The PAs are fabricated in 0.18 μm power management platform, which is integrated with a standard logic technology CMOS process. The single stage PA utilizes LC matching to achieve a peak output power of 31.4 dBm at 3.8 GHz. A small signal gain of 5.2 dB and a maximum drain efficiency (DE) of 24.3 % are also achieved, using a 9 V supply. The two stage differential design utilizes input and output transformers and LC inter-stage matching to achieve a peak saturated output power of 33.3 dBm at 3.9 GHz. A small signal gain of 9 dB and a maximum drain efficiency (DE) of 10.5 % are also achieved, using a 9 V supply.

Original languageEnglish
Title of host publication2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479974733
DOIs
StatePublished - 17 Dec 2015
EventIEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015 - Tel-Aviv, Israel
Duration: 2 Nov 20154 Nov 2015

Publication series

Name2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015

Conference

ConferenceIEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015
Country/TerritoryIsrael
CityTel-Aviv
Period2/11/154/11/15

Keywords

  • Amplifier
  • Laterally Diffused MOS
  • class AB
  • transformer

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