Full frequency back-action spectrum of a single-electron transistor during qubit readout

Göran Johansson*, Andreas Käck, Göran Wendin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The finite frequency voltage fluctuations of single electron transistor (SET) island biased in the transport mode were evaluated. An expression was derived for the voltage noise of a SET valid in the entire frequency range from low frequency classical shot noise to high frequency quantum noise. The expression was used to analyze the back-action of the SET on the single-Cooper-pair box (SCB). Single-shot readout of a SCB qubit using radio-frequency single electron transistor (RFSET) was found to be possible using the information about back-action.

Original languageEnglish
Article number046802
Pages (from-to)468021-468024
Number of pages4
JournalPhysical Review Letters
Volume88
Issue number4
StatePublished - 28 Jan 2002
Externally publishedYes

Fingerprint

Dive into the research topics of 'Full frequency back-action spectrum of a single-electron transistor during qubit readout'. Together they form a unique fingerprint.

Cite this