Abstract
One-dimensional (1D) nanostructures have attracted considerable attention as a result of their exceptional properties and potential applications. Among them, 1D axial heterostructures with well-defined and controlled heterojunctions between different nanomaterials or between different 1D nanostructures (i.e., nanowire-nanotube heterojunctions) have recently become of particular interest as potential building blocks in future high-performance nano-optoelectronic and nanoelectronic devices. Here, we report on the preparation and characterization of crystalline silicon nanowire-nanotube (SiNW-NT) heterostructures with controlled geometry, kinked and unkinked, and composition using germanium-silicon nanowire heterostructures with abrupt heterojunctions (∼2 nm wide) as a template via the VLS-CVD mechanism.
Original language | English |
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Pages (from-to) | 1121-1128 |
Number of pages | 8 |
Journal | Nano Letters |
Volume | 12 |
Issue number | 3 |
DOIs | |
State | Published - 14 Mar 2012 |
Keywords
- Nanowire
- electrical devices
- germanium
- heterostructures
- nanotube
- silicon