From crystalline germanium-silicon axial heterostructures to silicon nanowire-nanotubes

Moshit Ben-Ishai, Fernando Patolsky*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


One-dimensional (1D) nanostructures have attracted considerable attention as a result of their exceptional properties and potential applications. Among them, 1D axial heterostructures with well-defined and controlled heterojunctions between different nanomaterials or between different 1D nanostructures (i.e., nanowire-nanotube heterojunctions) have recently become of particular interest as potential building blocks in future high-performance nano-optoelectronic and nanoelectronic devices. Here, we report on the preparation and characterization of crystalline silicon nanowire-nanotube (SiNW-NT) heterostructures with controlled geometry, kinked and unkinked, and composition using germanium-silicon nanowire heterostructures with abrupt heterojunctions (∼2 nm wide) as a template via the VLS-CVD mechanism.

Original languageEnglish
Pages (from-to)1121-1128
Number of pages8
JournalNano Letters
Issue number3
StatePublished - 14 Mar 2012


  • Nanowire
  • electrical devices
  • germanium
  • heterostructures
  • nanotube
  • silicon


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