Abstract
The local voltage fluctuations in the supply and ground grids triggered by on-die logic cell switching in VLSI devices have been experimentally studied. The results show that these fluctuations have a resonant-like form i.e., the on-die power grid should be described as an RLC circuit. The studies reveal that the active element (i.e., CMOS logic cell) affects the frequency properties of power supply and ground grids during its switching (as opposed to before or after switching). It is demonstrated that the frequency properties of the both grids are inter-related via the interconnecting active elements.
| Original language | English |
|---|---|
| Pages (from-to) | 1760-1763 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 87 |
| Issue number | 9 |
| DOIs | |
| State | Published - Nov 2010 |
Keywords
- Nano-scale on-die interconnects
- On-die interconnect inductance
- On-die power supply and ground grids
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