Frequency properties of on-die power distribution network in VLSI circuits

Pavel Livshits, Yefim Fefer, Anton Rozen, Yoram Shapira

Research output: Contribution to journalArticlepeer-review

Abstract

The local voltage fluctuations in the supply and ground grids triggered by on-die logic cell switching in VLSI devices have been experimentally studied. The results show that these fluctuations have a resonant-like form i.e., the on-die power grid should be described as an RLC circuit. The studies reveal that the active element (i.e., CMOS logic cell) affects the frequency properties of power supply and ground grids during its switching (as opposed to before or after switching). It is demonstrated that the frequency properties of the both grids are inter-related via the interconnecting active elements.

Original languageEnglish
Pages (from-to)1760-1763
Number of pages4
JournalMicroelectronic Engineering
Volume87
Issue number9
DOIs
StatePublished - Nov 2010

Keywords

  • Nano-scale on-die interconnects
  • On-die interconnect inductance
  • On-die power supply and ground grids

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