The electrical properties of metal oxides play a crucial role in the development of new photovoltaic (PV) systems. Here we demonstrate a general approach for the determination and analysis of these properties in thin films of new metal oxide based PV materials. A high throughput electrical scanning system, which facilitates temperature dependent measurements at different atmospheres for highly resistive samples, was designed and constructed. The instrument is capable of determining conductivity and activation energy values for relatively large sample areas, of about 72 × 72 mm2, with the implementation of geometrical correction factors. The efficiency of our scanning system was tested using two different samples of CuO and commercially available Fluorine doped tin oxide coated glass substrates. Our high throughput tool was able to identify the electrical properties of both resistive metal oxide thin film samples with high precision and accuracy. The scanning system enabled us to gain insight into transport mechanisms with novel compositions and to use those insights to make smart choices when choosing materials for our multilayer thin film all oxide photovoltaic cells.