Formation of TiN-encapsulated copper structures in a NH3 ambient

Jian Li; J. W. Mayer; Y. Shacham-Diamand; E. G. Colgan

doi:10.1063/1.106783

Formation of TiN-encapsulated copper structures in a NH₃ ambient

Jian Li^*, J. W. Mayer, Y. Shacham-Diamand, E. G. Colgan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

A TiN-encapsulated copper structure was made by annealing a Cu-10 at. %Ti alloy film evaporated on a SiO₂/Si(100) substrate at 550°C in a NH₃ ambient. A fast heating rate (70°C/min) to 550°C can effectively suppress the formation of Cu₃Ti and enhance the TiN _x formation near the surface of the copper film. Oxygen incorporation in the TiN_x layer was found by Auger depth profiling measurement. This self-encapsulated Cu structure exhibits good adhesion to SiO₂ and oxidation resistance.

Original language	English
Pages (from-to)	2983-2985
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	24
DOIs	https://doi.org/10.1063/1.106783
State	Published - 1992
Externally published	Yes

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abstract = "A TiN-encapsulated copper structure was made by annealing a Cu-10 at. %Ti alloy film evaporated on a SiO2/Si(100) substrate at 550°C in a NH3 ambient. A fast heating rate (70°C/min) to 550°C can effectively suppress the formation of Cu3Ti and enhance the TiN x formation near the surface of the copper film. Oxygen incorporation in the TiNx layer was found by Auger depth profiling measurement. This self-encapsulated Cu structure exhibits good adhesion to SiO2 and oxidation resistance.",

author = "Jian Li and Mayer, {J. W.} and Y. Shacham-Diamand and Colgan, {E. G.}",

year = "1992",

doi = "10.1063/1.106783",

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AU - Li, Jian

AU - Mayer, J. W.

AU - Shacham-Diamand, Y.

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N2 - A TiN-encapsulated copper structure was made by annealing a Cu-10 at. %Ti alloy film evaporated on a SiO2/Si(100) substrate at 550°C in a NH3 ambient. A fast heating rate (70°C/min) to 550°C can effectively suppress the formation of Cu3Ti and enhance the TiN x formation near the surface of the copper film. Oxygen incorporation in the TiNx layer was found by Auger depth profiling measurement. This self-encapsulated Cu structure exhibits good adhesion to SiO2 and oxidation resistance.

AB - A TiN-encapsulated copper structure was made by annealing a Cu-10 at. %Ti alloy film evaporated on a SiO2/Si(100) substrate at 550°C in a NH3 ambient. A fast heating rate (70°C/min) to 550°C can effectively suppress the formation of Cu3Ti and enhance the TiN x formation near the surface of the copper film. Oxygen incorporation in the TiNx layer was found by Auger depth profiling measurement. This self-encapsulated Cu structure exhibits good adhesion to SiO2 and oxidation resistance.

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Formation of TiN-encapsulated copper structures in a NH₃ ambient

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