TY - JOUR
T1 - Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control
AU - Tuktamyshev, Artur
AU - Vichi, Stefano
AU - Cesura, Federico
AU - Fedorov, Alexey
AU - Bietti, Sergio
AU - Chrastina, Daniel
AU - Tsukamoto, Shiro
AU - Sanguinetti, Stefano
N1 - Publisher Copyright:
© 2022 Elsevier B.V.
PY - 2022/12/15
Y1 - 2022/12/15
N2 - We have successfully grown, through the detailed control of the growth kinetics, flat InAlAs metamorphic buffer layers on 2∘-off GaAs(111)A substrates using molecular beam epitaxy. Almost full plastic relaxation is obtained for a layer thickness > 40 nm. The control of an adatom diffusion length and a step ejection probability from the bunches permits a reduction of the InAlAs epilayer root-mean-square surface roughness to 0.55 nm.
AB - We have successfully grown, through the detailed control of the growth kinetics, flat InAlAs metamorphic buffer layers on 2∘-off GaAs(111)A substrates using molecular beam epitaxy. Almost full plastic relaxation is obtained for a layer thickness > 40 nm. The control of an adatom diffusion length and a step ejection probability from the bunches permits a reduction of the InAlAs epilayer root-mean-square surface roughness to 0.55 nm.
KW - A1. Crystal morphology
KW - A2. Single crystal growth
KW - A3. Molecular beam epitaxy
KW - B2. Semiconducting III–V materials
KW - B3. Infrared devices
UR - http://www.scopus.com/inward/record.url?scp=85139828021&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2022.126906
DO - 10.1016/j.jcrysgro.2022.126906
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AN - SCOPUS:85139828021
SN - 0022-0248
VL - 600
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 126906
ER -