Fine tuning of Au/SiO2/Si diodes by varying interfacial dipoles using molecular monolayers

Y. Selzer, D. Cahen

Research output: Contribution to journalArticlepeer-review

Abstract

Fine tunning of Au/SiO2/Si diode was realized by varying interfacial dipoles using molecular monolayers. Barrier heights of the Schottky junctions were modified by molecular monolayers dipoles. Current-voltage curves for a series of molecularly modified junctions showed that the presence of molecules with the positive dipole decreased the current compared to the molecules with the negative dipole.The presence of molecular layer resulted in the decrease of current relative to that of the unmodified junctions.

Original languageEnglish
Pages (from-to)508-511
Number of pages4
JournalAdvanced Materials
Volume13
Issue number7
DOIs
StatePublished - 4 Apr 2001
Externally publishedYes

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