Filament Formation and the Final Resistance Modeling in Amorphous-Silicon Vertical Programmable Element

Keyphrases

• Polysilicon 100%
• Amorphous Silicon 100%
• Joule Heating 100%
• Filament Formation 100%
• Resistance Modeling 100%
• Limited Power Supply 100%
• Power Supply Model 100%
• Recrystallization 66%
• Forming Process 66%
• Breakdown Voltage 66%
• Silicon Filaments 66%
• Simplified Model 33%
• Ion Implantation 33%
• Constant Current 33%
• Resistivity 33%
• Electric Power 33%
• Increased Temperature 33%
• Explosives 33%
• Non-conductive Material 33%
• Circuitry 33%
• Approximate Model 33%
• Measurement Setup 33%
• Current Contribution 33%
• Crystalline Silicon 33%
• Filamentous Growth 33%
• Thermoelectric Properties 33%
• In Situ TEM 33%
• Two-step Model 33%
• Breakdown Field 33%
• Silicon Devices 33%
• Capacitor Discharge 33%
• Partially Molten 33%
• Parasitic Capacitor 33%
• Silicon Core 33%
• Amorphous Layer 33%
• Discharge Current 33%
• Parallel Resistance 33%
• Filament Material 33%
• Grain Structure 33%
• Molten Silicon 33%
• Amorphous Thickness 33%

Engineering

• Power Supply 100%
• Polysilicon 100%
• Breakdown Voltage 66%
• Silicon Filament 66%
• Limitations 33%
• Layer Thickness 33%
• Increasing Temperature 33%
• Ion Implantation 33%
• Measurement Setup 33%
• Approximate Model 33%
• Final Stage 33%
• Silicon Device 33%
• Parallel Resistance 33%
• Crystalline Silicon 33%
• Breakdown Field 33%
• Step Model 33%
• Silicon Metal 33%

Material Science

• Silicon 100%
• Amorphous Silicon 100%
• Amorphous Material 40%
• Crystalline Material 20%
• Ion Implantation 20%
• Electrical Resistivity 20%
• Capacitor 20%
• Silicon Device 20%
• Crystal Microstructure 20%