Ferroelectricity in layered bismuth oxide down to 1 nanometer

Qianqian Yang, Jingcong Hu, Yue Wen Fang, Yueyang Jia, Rui Yang, Shiqing Deng, Yue Lu*, Oswaldo Dieguez, Longlong Fan, Dongxing Zheng, Xixiang Zhang, Yongqi Dong, Zhenlin Luo, Zhen Wang, Huanhua Wang, Manling Sui, Xianran Xing, Jun Chen, Jianjun Tian*, Linxing Zhang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair–driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices.

Original languageEnglish
Pages (from-to)1218-1224
Number of pages7
Issue number6638
StatePublished - 24 Mar 2023


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