Ferroelectric memory resistive behavior in BaTiO3/Nb doped SrTiO3 heterojunctions

Pooja Singh, P. K. Rout, Manju Singh, R. K. Rakshit, Anjana Dogra*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We present the memristive (memory resistive) behavior in two different pulsed laser deposited BaTiO3/Nb doped SrTiO3 junctions. The first junction is controlled by space charge limited current (SCLC) conduction while the post-annealed junction is dominated by Schottky emission. The latter junction displays better ferroelectric and memristive properties (with an order of magnitude higher OFF/ON resistance ratio) as compared to the former junction with SCLC conduction. We attribute the improved behavior of the latter junction to the reduction of oxygen vacancies due to post-annealing of the film.

Original languageEnglish
Pages (from-to)60-64
Number of pages5
JournalThin Solid Films
StatePublished - 1 Dec 2017
Externally publishedYes


  • Barium titanate
  • Memory resistor
  • Pulsed laser deposition
  • Schottky emission
  • Space charge limited conduction


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