Ferroelectric memory resistive behavior in BaTiO3/Nb doped SrTiO3 heterojunctions

Pooja Singh; P. K. Rout; Manju Singh; R. K. Rakshit; Anjana Dogra

doi:10.1016/j.tsf.2017.06.024

Ferroelectric memory resistive behavior in BaTiO₃/Nb doped SrTiO₃ heterojunctions

Pooja Singh, P. K. Rout, Manju Singh, R. K. Rakshit, Anjana Dogra^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We present the memristive (memory resistive) behavior in two different pulsed laser deposited BaTiO₃/Nb doped SrTiO₃ junctions. The first junction is controlled by space charge limited current (SCLC) conduction while the post-annealed junction is dominated by Schottky emission. The latter junction displays better ferroelectric and memristive properties (with an order of magnitude higher OFF/ON resistance ratio) as compared to the former junction with SCLC conduction. We attribute the improved behavior of the latter junction to the reduction of oxygen vacancies due to post-annealing of the film.

Original language	English
Pages (from-to)	60-64
Number of pages	5
Journal	Thin Solid Films
Volume	643
DOIs	https://doi.org/10.1016/j.tsf.2017.06.024
State	Published - 1 Dec 2017
Externally published	Yes

Keywords

Barium titanate
Memory resistor
Pulsed laser deposition
Schottky emission
Space charge limited conduction

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10.1016/j.tsf.2017.06.024

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title = "Ferroelectric memory resistive behavior in BaTiO3/Nb doped SrTiO3 heterojunctions",

abstract = "We present the memristive (memory resistive) behavior in two different pulsed laser deposited BaTiO3/Nb doped SrTiO3 junctions. The first junction is controlled by space charge limited current (SCLC) conduction while the post-annealed junction is dominated by Schottky emission. The latter junction displays better ferroelectric and memristive properties (with an order of magnitude higher OFF/ON resistance ratio) as compared to the former junction with SCLC conduction. We attribute the improved behavior of the latter junction to the reduction of oxygen vacancies due to post-annealing of the film.",

keywords = "Barium titanate, Memory resistor, Pulsed laser deposition, Schottky emission, Space charge limited conduction",

author = "Pooja Singh and Rout, {P. K.} and Manju Singh and Rakshit, {R. K.} and Anjana Dogra",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

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doi = "10.1016/j.tsf.2017.06.024",

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T1 - Ferroelectric memory resistive behavior in BaTiO3/Nb doped SrTiO3 heterojunctions

AU - Singh, Pooja

AU - Rout, P. K.

AU - Singh, Manju

AU - Rakshit, R. K.

AU - Dogra, Anjana

PY - 2017/12/1

Y1 - 2017/12/1

N2 - We present the memristive (memory resistive) behavior in two different pulsed laser deposited BaTiO3/Nb doped SrTiO3 junctions. The first junction is controlled by space charge limited current (SCLC) conduction while the post-annealed junction is dominated by Schottky emission. The latter junction displays better ferroelectric and memristive properties (with an order of magnitude higher OFF/ON resistance ratio) as compared to the former junction with SCLC conduction. We attribute the improved behavior of the latter junction to the reduction of oxygen vacancies due to post-annealing of the film.

AB - We present the memristive (memory resistive) behavior in two different pulsed laser deposited BaTiO3/Nb doped SrTiO3 junctions. The first junction is controlled by space charge limited current (SCLC) conduction while the post-annealed junction is dominated by Schottky emission. The latter junction displays better ferroelectric and memristive properties (with an order of magnitude higher OFF/ON resistance ratio) as compared to the former junction with SCLC conduction. We attribute the improved behavior of the latter junction to the reduction of oxygen vacancies due to post-annealing of the film.

KW - Barium titanate

KW - Memory resistor

KW - Pulsed laser deposition

KW - Schottky emission

KW - Space charge limited conduction

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AN - SCOPUS:85020627565

SN - 0040-6090

VL - 643

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EP - 64

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Ferroelectric memory resistive behavior in BaTiO₃/Nb doped SrTiO₃ heterojunctions

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