Abstract
This paper discusses system aspects and describes experimental demonstrations of nanosecond wavelength tuning in laser diode structures. Both tunable transmitters and tunable filters are considered. The dependence of the refractive index on the carrier density in semiconductors is exploited to obtain fast wavelength tuning. Experimentally, switching times of < 15 ns have been demonstrated in a three-section DBR laser transmitter with maximum continuous tuning range of 2.2 nm. These conditions correspond to a system with 50 wavelength-addressable channels. A new scheme for simultaneous wavelength-switching and data modulation, which alleviates wavelength drifts due to thermal effects, is presented. DFB laser structures biased below the lasing threshold operate as resonant tunable amplifiers. A uniform DFB laser amplifier has been demonstrated with a 1 ns wavelength-switching time. Experiments with tunable transmitters and tunable filters that simulate their operation in packet switching systems, including both wavelength-switching and data modulation, are also described.
Original language | English |
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Pages (from-to) | 1190-1202 |
Number of pages | 13 |
Journal | IEEE Journal on Selected Areas in Communications |
Volume | 8 |
Issue number | 6 |
DOIs | |
State | Published - Aug 1990 |
Externally published | Yes |