@inproceedings{1433e4b601a14c3eaef42267e0bbe6d9,
title = "Fast switching of drift step recovery diodes based on all epi-si growth",
abstract = "DSRDs are fast HV opening switching devices. Traditionally, these deep junction devices are fabricated on silicon wafers by deep diffusion. We present DSRD results based on silicon epitaxial layers with as-grown junctions. Static measurements showed a rectifying behavior with leakage currents proportional to device dimension. Pulsed power measurements showed that the switching rate was dependant on the DSRD current density.",
keywords = "Pulse generation, Semiconductor epitaxial layers",
author = "Merensky, {Lev M.} and Inbar Shafir and Yaakov Sharabani and David Eger and Moshe Oron and Kardo-Sysoev, {Alexei F.} and Doron Shmilovitz and Ariel Sher and Kesar, {Amit S.}",
year = "2009",
doi = "10.1109/COMCAS.2009.5385950",
language = "אנגלית",
isbn = "9781424439850",
series = "2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009",
booktitle = "2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009",
note = "2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009 ; Conference date: 09-11-2009 Through 11-11-2009",
}