Fast switching of drift step recovery diodes based on all epi-si growth

Lev M. Merensky, Inbar Shafir, Yaakov Sharabani, David Eger, Moshe Oron, Alexei F. Kardo-Sysoev, Doron Shmilovitz, Ariel Sher, Amit S. Kesar

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

DSRDs are fast HV opening switching devices. Traditionally, these deep junction devices are fabricated on silicon wafers by deep diffusion. We present DSRD results based on silicon epitaxial layers with as-grown junctions. Static measurements showed a rectifying behavior with leakage currents proportional to device dimension. Pulsed power measurements showed that the switching rate was dependant on the DSRD current density.

Original languageEnglish
Title of host publication2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009
DOIs
StatePublished - 2009
Event2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009 - Tel Aviv, Israel
Duration: 9 Nov 200911 Nov 2009

Publication series

Name2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009

Conference

Conference2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009
Country/TerritoryIsrael
CityTel Aviv
Period9/11/0911/11/09

Keywords

  • Pulse generation
  • Semiconductor epitaxial layers

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