Abstract
A deep inductively coupled plasma etching process was developed as a part of a continuous effort to develop an all-silica on-chip platform for high-power optical devices. Combined F and Cl based etching chemistry was found most suitable since silica matrix and Al doping are generally etched using different chemistries. First large-core (∼20 × 20 μm) Yb/Al-codoped fused silica waveguides on pure silica substrate were successfully fabricated, featuring ∼1 dB/cm optical propagation loss.
Original language | English |
---|---|
Pages (from-to) | 265-271 |
Number of pages | 7 |
Journal | Optical Materials |
Volume | 38 |
DOIs | |
State | Published - 1 Dec 2014 |
Keywords
- Al doping
- Dry etching
- Fused silica
- Rare-earth doped silica
- Waveguide