Extending endurance of NROM memories to over 10 million program/erase cycles

Yakov Roizin; Evgeny Pikhay; Michael Lisiansky; Alexey Heiman; Eli Alon; Efraim Aloni; Amos Fenigstein

doi:10.1109/.2006.1629501

Extending endurance of NROM memories to over 10 million program/erase cycles

Yakov Roizin^*, Evgeny Pikhay, Michael Lisiansky, Alexey Heiman, Eli Alon, Efraim Aloni, Amos Fenigstein

^*Corresponding author for this work

TOWER Semiconductor Ltd.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

We report on NROM (nitride read only) memory with enhanced endurance/retention. A novel "refresh" is introduced into the cycling algorithm to exclude parasitic electron trapping in the memory transistor. Negative gate pulses are applied when the drain voltage in the erase procedure reaches the threshold value. The memory stack is optimized to allow injection of holes from the substrate through the bottom oxide (BOX). More than 10 million program/erase (P/E) cycles with excellent retention are easily achieved.

Original language	English
Title of host publication	21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006
Pages	74-75
Number of pages	2
DOIs	https://doi.org/10.1109/.2006.1629501
State	Published - 2006
Externally published	Yes
Event	21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006 - Monteray, CA, United States Duration: 12 Feb 2006 → 16 Feb 2006

Publication series

Name	21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006
Volume	2006

Conference

Conference	21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006
Country/Territory	United States
City	Monteray, CA
Period	12/02/06 → 16/02/06

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10.1109/.2006.1629501

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Roizin, Y., Pikhay, E., Lisiansky, M., Heiman, A., Alon, E., Aloni, E., & Fenigstein, A. (2006). Extending endurance of NROM memories to over 10 million program/erase cycles. In 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006 (pp. 74-75). Article 1629501 (21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006; Vol. 2006). https://doi.org/10.1109/.2006.1629501

@inproceedings{be1d10a126884332858891a184747850,

title = "Extending endurance of NROM memories to over 10 million program/erase cycles",

abstract = "We report on NROM (nitride read only) memory with enhanced endurance/retention. A novel {"}refresh{"} is introduced into the cycling algorithm to exclude parasitic electron trapping in the memory transistor. Negative gate pulses are applied when the drain voltage in the erase procedure reaches the threshold value. The memory stack is optimized to allow injection of holes from the substrate through the bottom oxide (BOX). More than 10 million program/erase (P/E) cycles with excellent retention are easily achieved.",

author = "Yakov Roizin and Evgeny Pikhay and Michael Lisiansky and Alexey Heiman and Eli Alon and Efraim Aloni and Amos Fenigstein",

year = "2006",

doi = "10.1109/.2006.1629501",

language = "אנגלית",

isbn = "1424400260",

series = "21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006",

pages = "74--75",

booktitle = "21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006",

note = "21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006 ; Conference date: 12-02-2006 Through 16-02-2006",

}

Roizin, Y, Pikhay, E, Lisiansky, M, Heiman, A, Alon, E, Aloni, E & Fenigstein, A 2006, Extending endurance of NROM memories to over 10 million program/erase cycles. in 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006., 1629501, 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006, vol. 2006, pp. 74-75, 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006, Monteray, CA, United States, 12/02/06. https://doi.org/10.1109/.2006.1629501

Extending endurance of NROM memories to over 10 million program/erase cycles. / Roizin, Yakov; Pikhay, Evgeny; Lisiansky, Michael et al.
21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006. 2006. p. 74-75 1629501 (21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Aloni, Efraim

AU - Fenigstein, Amos

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Extending endurance of NROM memories to over 10 million program/erase cycles

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