Experimental study of the Ioffe-Regel criterion for amorphous indium oxide films

Mark R. Graham, C. J. Adkins, Haim Behar, Ralph Rosenbaum

Research output: Contribution to journalArticlepeer-review

Abstract

The Ioffe-Regel criterion predicts the existence of a metal-insulator transition in a film series when the parameter kFle satisfies the criterion kFle ≈ 1; here kF is the Fermi wavenumber and le is the elastic mean free path of the carriers. According to this criterion, films having kFle » 1 are metallic, while films having kFle « 1 are insulating. We experimentally observe the metal-insulator transition in amorphous indium oxide films at kFle = 5.2 ± 0.5. The values of kFle were calculated from room temperature resistivity and Hall voltage measurements, while the metal-insulator transition was determined from low-temperature resistivity data using the 'w'-criterion of Mobius and of Zabrodskii and Zinov'eva.

Original languageEnglish
Pages (from-to)809-819
Number of pages11
JournalJournal of Physics Condensed Matter
Volume10
Issue number4
DOIs
StatePublished - 2 Feb 1998

Fingerprint

Dive into the research topics of 'Experimental study of the Ioffe-Regel criterion for amorphous indium oxide films'. Together they form a unique fingerprint.

Cite this