TY - JOUR
T1 - Experimental study of the Ioffe-Regel criterion for amorphous indium oxide films
AU - Graham, Mark R.
AU - Adkins, C. J.
AU - Behar, Haim
AU - Rosenbaum, Ralph
PY - 1998/2/2
Y1 - 1998/2/2
N2 - The Ioffe-Regel criterion predicts the existence of a metal-insulator transition in a film series when the parameter kFle satisfies the criterion kFle ≈ 1; here kF is the Fermi wavenumber and le is the elastic mean free path of the carriers. According to this criterion, films having kFle » 1 are metallic, while films having kFle « 1 are insulating. We experimentally observe the metal-insulator transition in amorphous indium oxide films at kFle = 5.2 ± 0.5. The values of kFle were calculated from room temperature resistivity and Hall voltage measurements, while the metal-insulator transition was determined from low-temperature resistivity data using the 'w'-criterion of Mobius and of Zabrodskii and Zinov'eva.
AB - The Ioffe-Regel criterion predicts the existence of a metal-insulator transition in a film series when the parameter kFle satisfies the criterion kFle ≈ 1; here kF is the Fermi wavenumber and le is the elastic mean free path of the carriers. According to this criterion, films having kFle » 1 are metallic, while films having kFle « 1 are insulating. We experimentally observe the metal-insulator transition in amorphous indium oxide films at kFle = 5.2 ± 0.5. The values of kFle were calculated from room temperature resistivity and Hall voltage measurements, while the metal-insulator transition was determined from low-temperature resistivity data using the 'w'-criterion of Mobius and of Zabrodskii and Zinov'eva.
UR - http://www.scopus.com/inward/record.url?scp=0032472702&partnerID=8YFLogxK
U2 - 10.1088/0953-8984/10/4/010
DO - 10.1088/0953-8984/10/4/010
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AN - SCOPUS:0032472702
SN - 0953-8984
VL - 10
SP - 809
EP - 819
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
IS - 4
ER -