Exoelectron emission from silicon nanocrystals

Gil Rosenman; Daniel Aronov; Michael Molotskii; Yakov Roizin; Alexey Heiman; Wan Yuet Mei; Rene De Blank

doi:10.1063/1.2177375

Exoelectron emission from silicon nanocrystals

Gil Rosenman, Daniel Aronov, Michael Molotskii, Yakov Roizin, Alexey Heiman, Wan Yuet Mei, Rene De Blank

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We have observed a high-temperature thermostimulated exoelectron emission from charged silicon nanocrystals with nitrided surface embedded into the amorphous SiO₂ matrix. The developed Auger model allows understanding thermostimulated exoelectron emission origin and estimating energy activation of traps responsible for charge retention in this type of flash memory based on Si nanocrystals. The high activation energy E_t of the electrons trapped in the nanocrystals confirms high potential of Si nanocrystal materials for fabrication of semiconductor memories with enhanced retention.

Original language	English
Article number	056101
Journal	Journal of Applied Physics
Volume	99
Issue number	5
DOIs	https://doi.org/10.1063/1.2177375
State	Published - 1 Mar 2006

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10.1063/1.2177375

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title = "Exoelectron emission from silicon nanocrystals",

abstract = "We have observed a high-temperature thermostimulated exoelectron emission from charged silicon nanocrystals with nitrided surface embedded into the amorphous SiO2 matrix. The developed Auger model allows understanding thermostimulated exoelectron emission origin and estimating energy activation of traps responsible for charge retention in this type of flash memory based on Si nanocrystals. The high activation energy Et of the electrons trapped in the nanocrystals confirms high potential of Si nanocrystal materials for fabrication of semiconductor memories with enhanced retention.",

author = "Gil Rosenman and Daniel Aronov and Michael Molotskii and Yakov Roizin and Alexey Heiman and Mei, {Wan Yuet} and {De Blank}, Rene",

note = "Funding Information: This work was supported by the “MAGNET” program of the Chief Scientist Office at the Israeli Ministry of Industry and Trade, Consortium of Emerging Dielectrics, and Conductor Technologies for the Semiconductor Industry.",

year = "2006",

month = mar,

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doi = "10.1063/1.2177375",

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AU - Rosenman, Gil

AU - Aronov, Daniel

AU - Molotskii, Michael

AU - Roizin, Yakov

AU - Heiman, Alexey

AU - Mei, Wan Yuet

AU - De Blank, Rene

N1 - Funding Information: This work was supported by the “MAGNET” program of the Chief Scientist Office at the Israeli Ministry of Industry and Trade, Consortium of Emerging Dielectrics, and Conductor Technologies for the Semiconductor Industry.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - We have observed a high-temperature thermostimulated exoelectron emission from charged silicon nanocrystals with nitrided surface embedded into the amorphous SiO2 matrix. The developed Auger model allows understanding thermostimulated exoelectron emission origin and estimating energy activation of traps responsible for charge retention in this type of flash memory based on Si nanocrystals. The high activation energy Et of the electrons trapped in the nanocrystals confirms high potential of Si nanocrystal materials for fabrication of semiconductor memories with enhanced retention.

AB - We have observed a high-temperature thermostimulated exoelectron emission from charged silicon nanocrystals with nitrided surface embedded into the amorphous SiO2 matrix. The developed Auger model allows understanding thermostimulated exoelectron emission origin and estimating energy activation of traps responsible for charge retention in this type of flash memory based on Si nanocrystals. The high activation energy Et of the electrons trapped in the nanocrystals confirms high potential of Si nanocrystal materials for fabrication of semiconductor memories with enhanced retention.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Exoelectron emission from silicon nanocrystals

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