Excess dissipation in a single-electron box: The sisyphus resistance

F. Persson*, C. M. Wilson, M. Sandberg, G. Johansson, P. Delsing

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We present measurements of the ac response of a single-electron box (SEB). We apply a radio frequency signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.

Original languageEnglish
Pages (from-to)953-957
Number of pages5
JournalNano Letters
Issue number3
StatePublished - 10 Mar 2010
Externally publishedYes


  • Dissipation
  • Rf-reflectometry
  • Single-electron box
  • Sisyphus resistance


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