Excess dissipation in a single-electron box: The sisyphus resistance

F. Persson; C. M. Wilson; M. Sandberg; G. Johansson; P. Delsing

doi:10.1021/nl903887x

Excess dissipation in a single-electron box: The sisyphus resistance

F. Persson^*, C. M. Wilson, M. Sandberg, G. Johansson, P. Delsing

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We present measurements of the ac response of a single-electron box (SEB). We apply a radio frequency signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.

Original language	English
Pages (from-to)	953-957
Number of pages	5
Journal	Nano Letters
Volume	10
Issue number	3
DOIs	https://doi.org/10.1021/nl903887x
State	Published - 10 Mar 2010
Externally published	Yes

Keywords

Dissipation
Rf-reflectometry
Single-electron box
Sisyphus resistance

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10.1021/nl903887x

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AU - Persson, F.

AU - Wilson, C. M.

AU - Sandberg, M.

AU - Johansson, G.

AU - Delsing, P.

PY - 2010/3/10

Y1 - 2010/3/10

N2 - We present measurements of the ac response of a single-electron box (SEB). We apply a radio frequency signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.

AB - We present measurements of the ac response of a single-electron box (SEB). We apply a radio frequency signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.

KW - Dissipation

KW - Rf-reflectometry

KW - Single-electron box

KW - Sisyphus resistance

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Excess dissipation in a single-electron box: The sisyphus resistance

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Keywords

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