Excess carriers lifetime in InP single crystals: Radiative versus nonradiative recombination

A. Liu; Y. Rosenwaks

doi:10.1063/1.370748

Excess carriers lifetime in InP single crystals: Radiative versus nonradiative recombination

A. Liu^*, Y. Rosenwaks

^*Corresponding author for this work

School of Electrical Engineering

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

A detailed time resolved photoluminescence (TRPL) study of the recombination mechanisms in InP single crystals was performed. The radiative recombination is dominant in undoped InP and the effective lifetime is very long due to the photon recycling effect and very low concentration of SRH recombination centers. The majority carrier lifetime decreases much faster than the minority carrier lifetime with increasing the doping concentration. The possible reason is that S introduces more recombination centers for electrons than for holes.

Original language	English
Pages (from-to)	430-437
Number of pages	8
Journal	Journal of Applied Physics
Volume	86
Issue number	1
DOIs	https://doi.org/10.1063/1.370748
State	Published - Jul 1999

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title = "Excess carriers lifetime in InP single crystals: Radiative versus nonradiative recombination",

abstract = "A detailed time resolved photoluminescence (TRPL) study of the recombination mechanisms in InP single crystals was performed. The radiative recombination is dominant in undoped InP and the effective lifetime is very long due to the photon recycling effect and very low concentration of SRH recombination centers. The majority carrier lifetime decreases much faster than the minority carrier lifetime with increasing the doping concentration. The possible reason is that S introduces more recombination centers for electrons than for holes.",

author = "A. Liu and Y. Rosenwaks",

year = "1999",

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AB - A detailed time resolved photoluminescence (TRPL) study of the recombination mechanisms in InP single crystals was performed. The radiative recombination is dominant in undoped InP and the effective lifetime is very long due to the photon recycling effect and very low concentration of SRH recombination centers. The majority carrier lifetime decreases much faster than the minority carrier lifetime with increasing the doping concentration. The possible reason is that S introduces more recombination centers for electrons than for holes.

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Excess carriers lifetime in InP single crystals: Radiative versus nonradiative recombination

Abstract

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