Evolution of the Fermi surface of a doped topological insulator with carrier concentration

E. Lahoud*, E. Maniv, M. Shaviv Petrushevsky, M. Naamneh, A. Ribak, S. Wiedmann, L. Petaccia, Z. Salman, K. B. Chashka, Y. Dagan, A. Kanigel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


In an ideal bulk topological insulator (TI) conducting surface states protected by time-reversal symmetry enfold an insulating crystal. However, the archetypical TI, Bi2Se3, is actually never insulating; it is in fact a relatively good metal. Nevertheless, it is the most studied system among all the TIs, mainly due to its simple band structure and large spin-orbit gap. Recently, it was shown that copper intercalated Bi2Se 3 becomes superconducting and it was suggested as a realization of a topological superconductor. Here we use a combination of techniques that are sensitive to the shape of the Fermi surface (FS): the Shubnikov-de Haas effect and angle-resolved photoemission spectroscopy to study the evolution of the FS shape with carrier concentration, n. We find that as n increases, the FS becomes two-dimensional-like. These results are of crucial importance for understanding the superconducting properties of CuxBi2Se3.

Original languageEnglish
Article number195107
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number19
StatePublished - 5 Nov 2013


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