Abstract
The metal-insulator transition has been induced by hydrogen implantation at low fluence in a macroscopically inhomogeneous percolating Al-Ge mixture near the percolation threshold. The transition is reversible by annealing, showing that hydrogen implantation increases the local disorder in the Al metal grains without affecting the percolation structure. We submit that this is the first experimental evidence of an Anderson (metal-insulator) transition in a three-dimensional pure metal.
Original language | English |
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Pages (from-to) | 465-470 |
Number of pages | 6 |
Journal | Europhysics Letters |
Volume | 2 |
Issue number | 6 |
DOIs | |
State | Published - 1986 |
Externally published | Yes |