EVIDENCE FOR THE METAL-INSULATOR TRANSITION IN A PURE 3D METAL.

P. Nedellec*, A. Traverse, L. Dumoulin, H. Bernas, L. Amaral, G. Deutscher

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The metal-insulator transition has been induced by hydrogen implantation at low fluence in a macroscopically inhomogeneous percolating Al-Ge mixture near the percolation threshold. The transition is reversible by annealing, showing that hydrogen implantation increases the local disorder in the Al metal grains without affecting the percolation structure. We submit that this is the first experimental evidence of an Anderson (metal-insulator) transition in a three-dimensional pure metal.

Original languageEnglish
Pages (from-to)465-470
Number of pages6
JournalEurophysics Letters
Volume2
Issue number6
DOIs
StatePublished - 1986
Externally publishedYes

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