Evidence for low intrinsic surface-recombination velocity on p-type InP

Direct measurements of the intrinsic surface-recombination velocity (SRV) on p-type InP have been performed using ultrafast time-resolved photoluminescence. The results show that the intrinsic SRV on p-type InP is low (500 cm/s), similar to the value reported for n-type InP surfaces. It is suggested that the low luminescence efficiency of p-type InP is due to its low effective bulk lifetime (<23 ns) and to a large surface band bending, and does not indicate high SRV as has been generally accepted.