Erbium-doped and Raman microlasers on a silicon chip fabricated by the sol-gel process

Lan Yang, Tal Carmon, Bumki Min, Sean M. Spillane, Kerry J. Vahala

Research output: Contribution to journalArticlepeer-review

Abstract

We report high-Q sol-gel microresonators on silicon chips, fabricated directly from a sol-gel layer deposited onto a silicon substrate. Quality factors as high as 2.5× 107 at 1561 nm were obtained in toroidal microcavities formed of silica sol-gel, which allowed Raman lasing at absorbed pump powers below 1 mW. Additionally, Er3+ -doped microlasers were fabricated from Er3+ -doped sol-gel layers with control of the laser dynamics possible by varying the erbium concentration of the starting sol-gel material. Continuous lasing with a threshold of 660 nW for erbium-doped microlaser was also obtained.

Original languageEnglish
Article number091114
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number9
DOIs
StatePublished - 28 Feb 2005
Externally publishedYes

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