Epitaxial tendencies of ReSi2 on (001) silicon

John E. Mahan; Kent M. Geib; Gary Y. Robinson; Robert G. Long; Yan Xinghua; Gang Bai; Marc A. Nicolet; Menachem Nathan

doi:10.1063/1.103251

Epitaxial tendencies of ReSi₂ on (001) silicon

John E. Mahan^*, Kent M. Geib, Gary Y. Robinson, Robert G. Long, Yan Xinghua, Gang Bai, Marc A. Nicolet, Menachem Nathan

^*Corresponding author for this work

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

ReSi₂ thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi₂ (100)/Si(001) with ReSi₂ [010]∥Si〈110〉. The lattice matching consists of a common unit mesh of 120 Å² area, and a mismatch of 1.8%. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. Although the lateral dimension of the twins is on the order of 100 Å, MeV He⁺ backscattering spectrometry revealed a minimum channeling yield of 2% for a ∼1500-Å-thick film grown at 650°C. There is a very high degree of alignment between the ReSi₂ (100) and the Si(001) planes.

Original language	English
Pages (from-to)	2439-2441
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	24
DOIs	https://doi.org/10.1063/1.103251
State	Published - 1990

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@article{5be6b18950e940da953cf82378f7eb84,

title = "Epitaxial tendencies of ReSi2 on (001) silicon",

abstract = "ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2 (100)/Si(001) with ReSi2 [010]∥Si〈110〉. The lattice matching consists of a common unit mesh of 120 {\AA}2 area, and a mismatch of 1.8%. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. Although the lateral dimension of the twins is on the order of 100 {\AA}, MeV He+ backscattering spectrometry revealed a minimum channeling yield of 2% for a ∼1500-{\AA}-thick film grown at 650°C. There is a very high degree of alignment between the ReSi2 (100) and the Si(001) planes.",

author = "Mahan, {John E.} and Geib, {Kent M.} and Robinson, {Gary Y.} and Long, {Robert G.} and Yan Xinghua and Gang Bai and Nicolet, {Marc A.} and Menachem Nathan",

year = "1990",

doi = "10.1063/1.103251",

language = "אנגלית",

volume = "56",

pages = "2439--2441",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Epitaxial tendencies of ReSi2 on (001) silicon

AU - Mahan, John E.

AU - Geib, Kent M.

AU - Robinson, Gary Y.

AU - Long, Robert G.

AU - Xinghua, Yan

AU - Bai, Gang

AU - Nicolet, Marc A.

AU - Nathan, Menachem

PY - 1990

Y1 - 1990

N2 - ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2 (100)/Si(001) with ReSi2 [010]∥Si〈110〉. The lattice matching consists of a common unit mesh of 120 Å2 area, and a mismatch of 1.8%. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. Although the lateral dimension of the twins is on the order of 100 Å, MeV He+ backscattering spectrometry revealed a minimum channeling yield of 2% for a ∼1500-Å-thick film grown at 650°C. There is a very high degree of alignment between the ReSi2 (100) and the Si(001) planes.

AB - ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2 (100)/Si(001) with ReSi2 [010]∥Si〈110〉. The lattice matching consists of a common unit mesh of 120 Å2 area, and a mismatch of 1.8%. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. Although the lateral dimension of the twins is on the order of 100 Å, MeV He+ backscattering spectrometry revealed a minimum channeling yield of 2% for a ∼1500-Å-thick film grown at 650°C. There is a very high degree of alignment between the ReSi2 (100) and the Si(001) planes.

UR - http://www.scopus.com/inward/record.url?scp=0342944035&partnerID=8YFLogxK

U2 - 10.1063/1.103251

DO - 10.1063/1.103251

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0342944035

SN - 0003-6951

VL - 56

SP - 2439

EP - 2441

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Epitaxial tendencies of ReSi₂ on (001) silicon

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