Epitaxial films of semiconducting FeSi2 on (001) silicon

John E. Mahan*, Kent M. Geib, G. Y. Robinson, Robert G. Long, Yan Xinghua, Gang Bai, Marc A. Nicolet, Menachem Nathan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Epitaxial thin films of the semiconducting transition metal silicide, beta-FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2(100)/Si(001), with the azimuthal orientation being FeSi2[010]||Si〈110〉. This heteroepitaxial relationship has a common unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.

Original languageEnglish
Pages (from-to)2126-2128
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number21
DOIs
StatePublished - 1990

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