Enhanced Nonlinear Response by Manipulating the Dirac Point at the (111) LaTiO3/SrTiO3 Interface

G. Tuvia, A. Burshtein, I. Silber, A. Aharony, O. Entin-Wohlman, M. Goldstein, Y. Dagan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Tunable spin-orbit interaction (SOI) is an important feature for future spin-based devices. In the presence of a magnetic field, SOI induces an asymmetry in the energy bands, which can produce nonlinear transport effects (V∼I2). Here, we focus on such effects to study the role of SOI in the (111) LaTiO3/SrTiO3 interface. This system is a convenient platform for understanding the role of SOI since it exhibits a single-band Hall response through the entire gate-voltage range studied. We report a pronounced rise in the nonlinear longitudinal resistance at a critical in-plane field Hcr. This rise disappears when a small out-of-plane field component is present. We explain these results by considering the location of the Dirac point formed at the crossing of the spin-split energy bands. An in-plane magnetic field pushes this point outside of the Fermi contour, and consequently changes the symmetry of the Fermi contours and intensifies the nonlinear transport. An out-of-plane magnetic field opens a gap at the Dirac point, thereby significantly diminishing the nonlinear effects. We propose that magnetoresistance effects previously reported in interfaces with SOI could be comprehended within our suggested scenario.

Original languageEnglish
Article number146301
JournalPhysical Review Letters
Issue number14
StatePublished - 5 Apr 2024


FundersFunder number
Israel Academy of Sciences and Humanities
Directorate for Defense Research and Development3427/21
Pazi foundation326-1/20
United States-Israel Binational Science Foundation2020072
United States-Israel Binational Science Foundation
Israel Science Foundation476/22, 1711/23
Israel Science Foundation


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