@inbook{2d78b330fac245ed991cd14f8b993560,
title = "Elevated-Temperature STM Study of Ge and Si Growth on Si(001) From GeH4 and Si2H6",
abstract = "In this study we have investigated the mechanism of Si and Ge growth from gaseous precursors, at intermediate temperatures, in elevated-temperature scanning tunnelling microscope (STM). Based on our observations, we suggest a plausible mechanism for the growth of Ge and Si from GeH4 and Si2H6.",
author = "Owen, {J. H. G.} and K. Miki and D. Bowler and Briggs, {G. A. D.} and I. Goldfarb",
year = "1997",
doi = "10.1007/978-1-4899-0262-7_22",
language = "American English",
isbn = "978-1-4899-0262-7",
series = "NATO ASI Series",
publisher = "Springer US",
pages = "245--252",
editor = "Tringides, {M. C.}",
booktitle = "Surface Diffusion: Atomistic and Collective Processes",
address = "United States",
}