TY - JOUR
T1 - Electrostatic Selectivity of Volatile Organic Compounds Using Electrostatically Formed Nanowire Sensor
AU - Mahapatra, Niharendu
AU - Ben-Cohen, Avi
AU - Vaknin, Yonathan
AU - Henning, Alex
AU - Hayon, Joseph
AU - Shimanovich, Klimentiy
AU - Greenspan, Hayit
AU - Rosenwaks, Yossi
N1 - Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/3/23
Y1 - 2018/3/23
N2 - For the past several decades, there is growing demand for the development of low-power gas sensing technology for the selective detection of volatile organic compounds (VOCs), important for monitoring safety, pollution, and healthcare. Here we report the selective detection of homologous alcohols and different functional groups containing VOCs using the electrostatically formed nanowire (EFN) sensor without any surface modification of the device. Selectivity toward specific VOC is achieved by training machine-learning based classifiers using the calculated changes in the threshold voltage and the drain-source on current, obtained from systematically controlled biasing of the surrounding gates (junction and back gates) of the field-effect transistors (FET). This work paves the way for a Si complementary metal-oxide-semiconductor (CMOS)-based FET device as an electrostatically selective sensor suitable for mass production and low-power sensing technology.
AB - For the past several decades, there is growing demand for the development of low-power gas sensing technology for the selective detection of volatile organic compounds (VOCs), important for monitoring safety, pollution, and healthcare. Here we report the selective detection of homologous alcohols and different functional groups containing VOCs using the electrostatically formed nanowire (EFN) sensor without any surface modification of the device. Selectivity toward specific VOC is achieved by training machine-learning based classifiers using the calculated changes in the threshold voltage and the drain-source on current, obtained from systematically controlled biasing of the surrounding gates (junction and back gates) of the field-effect transistors (FET). This work paves the way for a Si complementary metal-oxide-semiconductor (CMOS)-based FET device as an electrostatically selective sensor suitable for mass production and low-power sensing technology.
KW - electrostatic selectivity
KW - electrostatically formed nanowire sensor
KW - field-effect transistors
KW - machine learning classifiers
KW - selective detection
KW - threshold voltage
KW - transistor parameters
KW - volatile organic compounds
UR - http://www.scopus.com/inward/record.url?scp=85044408785&partnerID=8YFLogxK
U2 - 10.1021/acssensors.8b00044
DO - 10.1021/acssensors.8b00044
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AN - SCOPUS:85044408785
SN - 2379-3694
VL - 3
SP - 709
EP - 715
JO - ACS Sensors
JF - ACS Sensors
IS - 3
ER -