Electrostatic properties of molecular gated BioFETs

M. Shaked*, O. Shaya, A. Doron, A. Cohen, I. Levy, Y. Rosenwaks

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


We combine Kelvin probe force microscopy and current-voltage measurements in order to characterize silicon-oninsulator biological Held effect transistors. The measurements were conducted on monolayer of (3-aminopropyl)- trimethoxysilane, which was deposited on a plasma activated silicon oxide surface of the transistor channel. The work function of the modified silicon oxide decreased by more then 2 eV as a function of the chemical treatment time. The current-voltage measurements preformed on the same devices showed a very large decrease (∼ 10 V) in the threshold voltage of the transistors following the chemical modification. A consequent increase of almost 3 orders of magnitude in the drain-source current was also observed. The (3-aminopropyl)-trimethoxysilane induced charge redistribution effects on the transistor channel surface are analyzed and discussed.

Original languageEnglish
Title of host publication2008 IEEE International Symposium on Industrial Electronics, ISIE 2008
Number of pages4
StatePublished - 2008
Event2008 IEEE International Symposium on Industrial Electronics, ISIE 2008 - Cambridge, United Kingdom
Duration: 30 Jun 20082 Jul 2008

Publication series

NameIEEE International Symposium on Industrial Electronics


Conference2008 IEEE International Symposium on Industrial Electronics, ISIE 2008
Country/TerritoryUnited Kingdom


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