Electrostatic properties of molecular gated BioFETs

M. Shaked, O. Shaya, A. Doron, A. Cohen, I. Levy, Y. Rosenwaks

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We combine Kelvin probe force microscopy and current-voltage measurements in order to characterize silicon-oninsulator biological Held effect transistors. The measurements were conducted on monolayer of (3-aminopropyl)- trimethoxysilane, which was deposited on a plasma activated silicon oxide surface of the transistor channel. The work function of the modified silicon oxide decreased by more then 2 eV as a function of the chemical treatment time. The current-voltage measurements preformed on the same devices showed a very large decrease (∼ 10 V) in the threshold voltage of the transistors following the chemical modification. A consequent increase of almost 3 orders of magnitude in the drain-source current was also observed. The (3-aminopropyl)-trimethoxysilane induced charge redistribution effects on the transistor channel surface are analyzed and discussed.

Original languageEnglish
Title of host publication2008 IEEE International Symposium on Industrial Electronics, ISIE 2008
Pages2056-2059
Number of pages4
DOIs
StatePublished - 2008
Event2008 IEEE International Symposium on Industrial Electronics, ISIE 2008 - Cambridge, United Kingdom
Duration: 30 Jun 20082 Jul 2008

Publication series

NameIEEE International Symposium on Industrial Electronics

Conference

Conference2008 IEEE International Symposium on Industrial Electronics, ISIE 2008
Country/TerritoryUnited Kingdom
CityCambridge
Period30/06/082/07/08

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