Electroplating of amorphous thin films of tungsten/nickel alloys

O. Younes; L. Zhu; Y. Rosenberg; Y. Shacham-Diamand; E. Gileadi

doi:10.1021/la010660x

Electroplating of amorphous thin films of tungsten/nickel alloys

O. Younes, L. Zhu, Y. Rosenberg, Y. Shacham-Diamand, E. Gileadi^*

^*Corresponding author for this work

School of Electrical Engineering

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

158 Scopus citations

Abstract

The electroplating of amorphous Ni/W alloys is described. The aqueous plating solution consists of NiSO₄, Na₂WO₄, and Na₃Cit at pH = 8.0. The bath is operated at room temperature. By avoiding the use of NH₄OH or any ammonium salt, it was possible to prepare alloys containing up to 50 a/o (76 w/o) W. XRD measurements revealed that amorphous alloys were obtained when the concentration of W in the alloy is 20-40 a/o. At lower concentrations of W the fcc substitutional solid solution Ni_(1-x)W_x was formed. At higher concentration, an orthorhombic crystal structure corresponding to a 1/1 Ni/W alloy was observed. SEM and STM measurements supported the existence of the amorphous phase. The conditions under which amorphous alloys are expected to be formed preferentially are discussed. Thin films of the amorphous phase were prepared reproducibly at any tungsten concentration in the above range. Therefore, these alloys can be used for barrier or capping layers in the microelectronic industry for ULSI and MEMS applications.

Original language	English
Pages (from-to)	8270-8275
Number of pages	6
Journal	Langmuir
Volume	17
Issue number	26
DOIs	https://doi.org/10.1021/la010660x
State	Published - 25 Dec 2001

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@article{d4f4c2af2f7445ea9b0f768b617df00d,

title = "Electroplating of amorphous thin films of tungsten/nickel alloys",

abstract = "The electroplating of amorphous Ni/W alloys is described. The aqueous plating solution consists of NiSO4, Na2WO4, and Na3Cit at pH = 8.0. The bath is operated at room temperature. By avoiding the use of NH4OH or any ammonium salt, it was possible to prepare alloys containing up to 50 a/o (76 w/o) W. XRD measurements revealed that amorphous alloys were obtained when the concentration of W in the alloy is 20-40 a/o. At lower concentrations of W the fcc substitutional solid solution Ni(1-x)Wx was formed. At higher concentration, an orthorhombic crystal structure corresponding to a 1/1 Ni/W alloy was observed. SEM and STM measurements supported the existence of the amorphous phase. The conditions under which amorphous alloys are expected to be formed preferentially are discussed. Thin films of the amorphous phase were prepared reproducibly at any tungsten concentration in the above range. Therefore, these alloys can be used for barrier or capping layers in the microelectronic industry for ULSI and MEMS applications.",

author = "O. Younes and L. Zhu and Y. Rosenberg and Y. Shacham-Diamand and E. Gileadi",

year = "2001",

month = dec,

day = "25",

doi = "10.1021/la010660x",

language = "אנגלית",

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T1 - Electroplating of amorphous thin films of tungsten/nickel alloys

AU - Younes, O.

AU - Zhu, L.

AU - Rosenberg, Y.

AU - Shacham-Diamand, Y.

AU - Gileadi, E.

PY - 2001/12/25

Y1 - 2001/12/25

N2 - The electroplating of amorphous Ni/W alloys is described. The aqueous plating solution consists of NiSO4, Na2WO4, and Na3Cit at pH = 8.0. The bath is operated at room temperature. By avoiding the use of NH4OH or any ammonium salt, it was possible to prepare alloys containing up to 50 a/o (76 w/o) W. XRD measurements revealed that amorphous alloys were obtained when the concentration of W in the alloy is 20-40 a/o. At lower concentrations of W the fcc substitutional solid solution Ni(1-x)Wx was formed. At higher concentration, an orthorhombic crystal structure corresponding to a 1/1 Ni/W alloy was observed. SEM and STM measurements supported the existence of the amorphous phase. The conditions under which amorphous alloys are expected to be formed preferentially are discussed. Thin films of the amorphous phase were prepared reproducibly at any tungsten concentration in the above range. Therefore, these alloys can be used for barrier or capping layers in the microelectronic industry for ULSI and MEMS applications.

AB - The electroplating of amorphous Ni/W alloys is described. The aqueous plating solution consists of NiSO4, Na2WO4, and Na3Cit at pH = 8.0. The bath is operated at room temperature. By avoiding the use of NH4OH or any ammonium salt, it was possible to prepare alloys containing up to 50 a/o (76 w/o) W. XRD measurements revealed that amorphous alloys were obtained when the concentration of W in the alloy is 20-40 a/o. At lower concentrations of W the fcc substitutional solid solution Ni(1-x)Wx was formed. At higher concentration, an orthorhombic crystal structure corresponding to a 1/1 Ni/W alloy was observed. SEM and STM measurements supported the existence of the amorphous phase. The conditions under which amorphous alloys are expected to be formed preferentially are discussed. Thin films of the amorphous phase were prepared reproducibly at any tungsten concentration in the above range. Therefore, these alloys can be used for barrier or capping layers in the microelectronic industry for ULSI and MEMS applications.

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JO - Langmuir

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Electroplating of amorphous thin films of tungsten/nickel alloys

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