Electronic transport behaviors of insulating icosahedral Al-Pd-Re bulk samples

Rachel L. Rosenbaum*, B. Grushko, B. Przepiórzyński

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Electronic transport measurements are summarised on two insulating icosahedral quasicrystalline (IQC) Al69.0Pd22.8 Re8.2 samples. Data were taken between 0.020 K ≤ T ≤ 292 K and in magnetic fields Bs up to 18T. For a weakly insulating IQC, the electronic conductivity followed the expression: σ(T) = σ0Tzexp(T/T0) over four decades of temperature. For a strongly insulating sample, the conductivity above 0.3 K followed simple temperature power laws, σ(T) = σ0Tz. Below 0.2 K, the conductivity displayed an activated variable-range hopping (VRH) law. These fits included a conductivity contribution arising from the presence of a second metallic phase, which caused "weak saturation" of the measured resistances below 1 K.

Original languageEnglish
Pages (from-to)101-113
Number of pages13
JournalJournal of Low Temperature Physics
Volume142
Issue number1-2
DOIs
StatePublished - Jan 2006

Keywords

  • Al-Pd-Re
  • Insulators
  • Quasicrystals
  • VRH activated conductivity

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