Electronic structure of doped d0 perovskite semiconductors

R. Bistritzer*, G. Khalsa, A. H. MacDonald

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We address the low-energy effective Hamiltonian of electron doped d0 perovskite semiconductors in cubic and tetragonal phases using the k•p method. The Hamiltonian depends on the spin-orbit interaction strength, on the temperature-dependent tetragonal distortion, and on a set of effective-mass parameters whose number is determined by the symmetry of the crystal. We explain how these parameters can be extracted from angle resolved photoemission, Raman spectroscopy, and magnetotransport measurements and estimate their values in SrTiO3.

Original languageEnglish
Article number115114
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number11
StatePublished - 10 Mar 2011
Externally publishedYes


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